| PART |
Description |
Maker |
| CY7C1297H-100AXC CY7C1297H-100AXI CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
| IDT71V633 IDT71V633S11PF IDT71V633S11PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1021BN09 CY7C1021BNL-15ZSXA CY7C1021BN-15ZXIT |
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp.
http://
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的1864K的x 32/36流通过SYNCBURST的SRAM
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| CY7C1351G-100AXC CY7C1351G-100AXI CY7C1351G-100BGC |
4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL?/a> Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1353G CY7C1353G-100AXC CY7C1353G-100AXI CY7C13 |
4-Mbit (256K x 18) Flow-through SRAM with NoBL垄芒 Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL?/a> Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL?Architecture
|
Cypress Semiconductor
|
| CY7C1473V25-117AI CY7C1471V25-133ACES CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL(TM) Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MT58L128L18FT-10 MT58L128L18FT-7.5 MT58L128V18F MT |
2MB: 128K X 18, 64K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
